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| Rev. 2.1 BSP324 Feature SIPMOS Power-Transistor Product Summary VDS RDS(on) ID 400 25 0.17 SOT-223 * N-Channel * Enhancement mode * Logic Level * dv/dt rated * Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 V A Type BSP324 Package PG-SOT223 Pb-free Packaging Yes Non dry Tape and Reel Information Marking L6327: 1000 pcs/reel BSP324 Maximum Ratings, at Tj = 25 C, unless otherwise specified Symbol Parameter Continuous drain current TA=25C TA=70C Value 0.17 0.14 0.68 6 20 1A (>250V, <500V) 1.8 -55... +150 55/150/56 Unit A ID Pulsed drain current TA=25C ID puls dv/dt VGS Ptot T j , Tstg Reverse diode dv/dt IS=0.17A, VDS=320V, di/dt=200A/s, Tjmax=175C kV/s V W C Gate source voltage ESD Class (JESD22-A114-HBM) Power dissipation TA=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2009-08-18 Rev. 2.1 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) BSP324 Symbol min. RthJS RthJA - Values typ. 16 max. 25 Unit K/W 85 45 115 70 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0, I D=250A Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 400 1.3 Values typ. 1.9 max. 2.3 Unit V Gate threshold voltage, VGS = V DS ID=94A Zero gate voltage drain current V DS=400V, V GS=0, T j=25C V DS=400V, V GS=0, T j=125C A 0.01 10 14.3 13.6 0.1 10 100 22 25 nA Gate-source leakage current V GS=20V, VDS=0 Drain-source on-state resistance V GS=4.5V, I D=0.05A Drain-source on-state resistance V GS=10V, I D=0.17A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (single layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2009-08-18 Rev. 2.1 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr V GS=0, I F=0.17A V R=200V, IF=l S, di F/dt=100A/s BSP324 Symbol Conditions min. Values typ. 0.19 103 9.2 3.8 4.6 4.4 17 68 max. 154 13.6 5.7 6.9 6.6 25 102 Unit g fs Ciss Coss Crss td(on) tr td(off) tf V DS2*I D*RDS(on)max, ID=0.14A V GS=0, V DS=25V, f=1MHz 0.09 - S pF V DD=225V, V GS=10V, ID=0.17A, RG=6 ns Qgs Qgd Qg VDD =320V, ID =0.17A - 0.35 2.17 4.54 3.6 0.45 2.82 5.9 - nC VDD =320V, ID =0.17A, VGS =0 to 10V V(plateau) VDD =320V, ID =0.17A V IS TA=25C - 0.8 85 104 0.17 0.68 1.2 127 156 A V ns nC Page 3 2009-08-18 Rev. 2.1 1 Power dissipation Ptot = f (TA) 1.9 BSP324 BSP324 2 Drain current ID = f (T A) parameter: VGS 10 V BSP324 0.18 W A 1.6 0.14 1.4 P tot ID 0.1 0.08 0.06 0.04 0.02 0 160 0 20 40 60 80 100 120 1.2 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 0.12 C C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 C 10 1 BSP324 4 Transient thermal impedance ZthJA = f (tp) parameter : D = t p/T 10 2 BSP324 A K/W 10 0 t = 170.0s p 10 1 ID / ID = V DS 1 ms 10 -1 Z thJA 10 10 ms 0 RD n) S(o D = 0.50 0.20 0.10 10 -2 10 -1 single pulse 0.05 0.02 DC 0.01 10 -3 10 0 10 1 10 2 V 10 3 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 s 10 4 VDS Page 4 tp 2009-08-18 Rev. 2.1 5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 C, V GS 0.6 BSP324 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: Tj = 25 C, V GS 22 18 R DS(on) 10V 7V 6V 5V 4.5V 4.3V 4.1V 3.9V 3.7V 16 14 12 0.4 0.3 3.7V 10 3.9V 4.1V 8 4.3V 0.2 4.5V 6 5V 6V 4 7V 0.1 10V 2 0 0 1 2 3 4 5 6 7 8 10 0 0 0.05 0.1 0.15 0.2 0.25 A ID 0.35 7 Typ. transfer characteristics ID= f ( VGS ); V DS 2 x ID x RDS(on)max parameter: Tj = 25 C 0.35 8 Typ. forward transconductance g fs = f(I D) parameter: Tj = 25 C 0.36 A S 0.28 0.25 0.2 gfs 0.15 0.1 0.05 0 0 1 2 3 0.24 0.2 0.16 0.12 0.08 0.04 0 ID V VGS Page 5 5 0 0.05 0.1 0.15 0.2 0.25 A ID 0.35 2009-08-18 Rev. 2.1 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 0.17 A, VGS = 10 V 130 BSP324 BSP324 10 Typ. gate threshold voltage VGS(th) = f (T j) parameter: VGS = VDS; ID =94A 2.6 V 98% 110 2.2 100 R DS(on) - VGS(th) 90 80 70 2 1.8 1.6 typ. 60 50 40 30 20 10 0 -60 -20 20 typ 0.8 0.6 -60 98% 1 1.4 2% 1.2 60 100 C 180 -20 20 60 100 C 160 Tj Tj 11 Typ. capacitances C = f (V DS) parameter: VGS=0, f=1 MHz, Tj = 25 C 10 3 12 Forward character. of reverse diode IF = f (V SD) parameter: Tj 10 0 BSP324 pF A Ciss 10 C 2 10 -1 Coss 10 1 IF 10 Crss -2 T j = 25 C typ T j = 150 C typ T j = 25 C (98%) T j = 150 C (98%) 10 0 10 5 10 15 20 V -3 0 30 0 0.4 0.8 1.2 1.6 2 2.4 V 3 V DS VSD Page 6 2009-08-18 Rev. 2.1 13 Typ. gate charge VGS = f (QG); parameter: VDS , ID = 0.17 A pulsed, Tj = 25 C 16 V BSP324 BSP324 14 Drain-source breakdown voltage V(BR)DSS = f (Tj) 490 BSP324 V 470 V (BR)DSS 0.2 VDS max 0.8 VDS max nC 12 460 450 440 430 420 410 400 V GS 10 8 0.5 VDS max 6 4 390 380 370 2 0 0 1 2 3 4 5 7 360 -60 -20 20 60 100 C 180 QG Tj Page 7 2009-08-18 Rev 2.1 BSP324 Page 8 2009-08-18 |
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